Zn-doped Zr oxynitride as charge-trapping layer for flash memory applications

In this work, we proposed Zn-doped Zr oxynitride (ZrZnON) as a new charge-trapping layer for flash memory applications and investigated its memory characteristics based on the capacitor structure of Al/Al2O3/ZrZnON/SiO2/Si. The high-K dielectric film, ZrON, was used as the control group. The effects of incorporating ZnO in ZrON were studied by comparing the differences of memory properties between the two charge-trapping layers. Measured data showed that the memory device containing ZrZnON had much larger C-V hysteresis window, higher programming/erasing speeds and much better charge retention properties than the one containing ZrON. These improvements should result from charge traps created by ZnO incorporation and deeper quantum wells built by the band-gap alignment of ZrZnON to the Si02 tunnel layer and Al2O3 blocking layer.published_or_final_versio

Nitrided GdTiO as charge-trapping layer for flash memory applications

Based on capacitor with the structure of Al/Al2O 3/GdTiO (N)/SiO2/Si, the charge-trapping properties of GdTiO and GdTiON films were investigated. Compared to the memory device with GdTiO film as charge-trapping layer, the one with GdTiON showed higher program/erase speed, larger memory window, and better retention characteristic due to additional charge traps with desirable energy level created by nitrogen incorporation in the film. © 2012 IEEE.published_or_final_versio

Entanglement criterion via general symmetric informationally complete measurements

We study the quantum separability problem by using general symmetric informationally complete measurements and present a separability criterion for arbitrary dimensional bipartite systems. We show by detailed examples that our criterion is more powerful than the existing ones in entanglement detection.Comment: 8 pages, 5 figure

Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

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